1.儀器介紹
二次離子質譜（SIMS）是一種用於通過用聚焦的一次離子束濺射樣品表面並收集和分析噴射的二次離子來分析固體表面和薄膜的組成的技術。SIMS是最靈敏的表面分析技術，元素檢測限為百萬分之幾到十億分之一。
Schematic of a typical dynamic SIMS instrument. High energy (usually several keV) ions are supplied by an ion gun (1 or 2) and focused on to the target sample (3), which ionizes and sputters some atoms off the surface (4). These secondary ions are then collected by ion lenses (5) and filtered according to atomic mass (6), then projected onto an electron multiplier (7, top), Faraday cup (7, bottom), or CCD screen (8)
2.工作原理
對，原理就這么簡單。
3.應用
#摻雜和雜質深度剖析；
#薄膜（金屬，電介質，SiGe，III-V和II-VI材料）的成分和雜質測量；
#淺埋植入物和超薄膜（ULE植入物和柵極氧化物）的超高深度分辨率分析；
#散裝分析包括Si中的B，C，O和N；
#離子注入機等加工工具的高精度匹配。
平常用到的大概就只有前三種。
4.分析方法
Measure the thickness of a-IGZO and analysis the density of Hydrogen-diffusion
分析IGZO有源層里的H離子雜質
To compare the existence of ions in the 350℃ and 500℃ annealed Al2O3 film.
雜質分析+1
TOF-SIMS depth profiles of the IZO thin films in order to study the interface of IZO and SiO2 in different temperture.
擴散分析
參考文獻
[1]Tari A, Wong W S. Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors[J]. Applied Physics Letters, 2018, 112.
[2]Park J H, Kim K, Yoo Y B, et al. Water adsorption effects of nitrate ion coordinated Al2O3 dielectric for high performance metal-oxide thin-film transistor[J]. Journal of Materials Chemistry C, 2013, 1(43):7166-7174.
[3]Bang J, Matsuishi S, Hosono H. Hydrogen anion and subgap states in amorphous In-Ga-Zn-O thin films for TFT applications[J]. Applied Physics Letters, 2017, 110(23):1012.